MASK FOR POLYCRYSTALLIZATION AND METHOD OF MANUFACTURING POLYCRYSTAL THIN-FILM TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a mask for polycrystallization by which the grain size of polycrystal silicon can be formed uniformly, to provide a method of manufacturing a thin-film transistor by using the mask, to provide a mask for polycrystallization which comprises electron mobility which is isotropic and uniform, and to provide a method of manufacturing a thin-film transistor by using the mask. SOLUTION: The mask for polycrystallization comprises a first vertical slit region and a second vertical slit region in which a number of slit patterns formed in the longitudinal direction are arranged in the transverse direction and a third horizontal slit region and a fourth horizontal slit region in which a number of slit patterns formed in the transverse direction are arranged in the longitudinal direction. At this time, the slit patterns in the first region and the slit patterns in the second region are arranged so as to be separated identically to the interval between the slit patterns, and the slit patterns in the third region and the slit patterns in the fourth region are arranged so as to be deviated by the interval between the slit patterns.