| 摘要 |
PROBLEM TO BE SOLVED: To prevent penetration in a stopper film on a first wiring inclination part and to form a micro contact hole in a state where the margin of a photo engraving is less when the contact hole is formed by using a self-alignment method. SOLUTION: An oxidized film 7 is deposited on first wirings (4a, 5a, 6a and 6b) and (3, 4b, 5b, 6c and 6d) formed on an Si substrate 1, and a sputter film 11 is formed on it under the condition that coverage is bad. The film 11 is etched until the sputter film 11 is removed at the base of a step between the wirings. The oxidized film 7 at the base of the step is etched with the sputter film 11 in a direction vertical to the first wiring, and a photoresist pattern 10 formed by the photo engraving in a direction parallel to the first wiring as masks. The photoresist pattern 10 is removed and the sputter film 11 is selectively removed by wet etching liquid.
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