发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To reduce power consumption at the time of standby by increasing access speed at shifting from standby to 'active', especially immediately after shifting to reading. SOLUTION: A strong charge pump 11 generates power source voltages of 5.0 V and 8.0 V. This power source voltages are supplied to constant voltage circuits 13-18. The constant voltage circuits 13-18 generate respectively voltages VPBL, VPYS, VPCGL, VPGCL, VPCGH and VPCGH in accordance with each operation mode of reading, programing, and erase. In a constant voltage circuit 18 operated at the time of 'active', current consumption at supplying the voltage VPCGH is large. On the contrary, a constant voltage circuit 17 is operated with low current consumption at the time of standby and generates the voltage VPCGH. High speed access can be performed by the voltage VPCGH generated by the constant voltage circuit 17 at the time of standby even immediately after shifting to 'active' especially to reading from standby. Also, current consumption at the time of standby can be reduced remarkably.</p>
申请公布号 JP2003091998(A) 申请公布日期 2003.03.28
申请号 JP20010285080 申请日期 2001.09.19
申请人 SEIKO EPSON CORP 发明人 NATORI KANJI
分类号 G11C16/06;G11C5/14;G11C7/22;G11C16/04;G11C16/30;(IPC1-7):G11C16/06 主分类号 G11C16/06
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