COMPOUND SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, LIGHT-EMITTING ELEMENT, LAMP, AND TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To solve the problem that a boron phosphide layer which is formed on a conventional silicon single-crystal substrate having a 1.0.0.}, 1.1.0.}, or 1.1.1.} crystalline surface as the surface results in a poor crystalline layer containing a number of crystalline defects such as dislocation and defects on stacked layers. SOLUTION: Silicon single-crystal is used for the substrate which has a (1.1.0) crystal layer inclined at an angle of 9 degrees ( deg.) to 15 degrees ( deg.) in [1.0.0.] crystal orientation. A boron phosphide (BP) semiconductor layer containing boron (B) and phosphorus (P) as constituent elements is formed on a surface of the substrate.