| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a spin transistor which has large magnetization dependency of a drain current and is superior in high speed reading. SOLUTION: The spin transistor is provided with a source (S) having a spin polarization part (F1) for forming spin-polarized electrons, a drain (D) having magnetic substance (F2), and a channel (C) for introducing electrons from the source to the drain. A point contact (QP) is formed between the channel and the drain. As a result, a high MR ratio can be obtained so that magnetism detection sensitivity and reading speed can be remarkably improved as compared with the conventional ones.</p> |
