| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral diode in which operation of a parasitic transistor is restrained while a high withstand voltage is ensured. SOLUTION: The lateral diode is provided with a first conductivity type cathode region (23) and an anode region (21) which are selectively formed on the surface of a semiconductor layer (19), and a first conductivity type RESURF region (25) which is formed overlapping with a peripheral part of the cathode region excepting the vicinity of the central part. Under the cathode region, a second conductivity type semiconductor region (19) is formed below which a first conductivity type buried layer (13) is formed. As a result, the parasitic transistor operation which is to be generated just below the cathode region can be effectively restrained.
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