| 摘要 |
PURPOSE: To suppress damage to an interlayer insulating film when photoresist is etched by using N2/H2. CONSTITUTION: A reformed layer which has resistance to N2/H2 plasma, is formed at an exposed part of the interlayer insulating film by using N2 plasma (process 1). The photoresist is removed by using N2/H2 plasma (process 2).
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