发明名称 REDUCING DEPOSITION OF PROCESS RESIDUES ON A SURFACE IN A CHAMBER
摘要 A process chamber 35 capable of processing a substrate 30 and monitoring a process conducted on the substrate 30, comprises a support 45, a gas inlet, a gas energizer, an exhaust 85, and a wall 38 having a recess 145 that is sized to reduce the deposition of process residues therein. A process monitoring system 35 may be used to monitoring a process that may be conducted on a substrate 30 in the process chamber 25 through the recess 145 in the wall 38.
申请公布号 WO0225696(A9) 申请公布日期 2003.03.27
申请号 WO2001US29802 申请日期 2001.09.21
申请人 APPLIED MATERIALS, INC. 发明人 GRIMBERGEN, MICHAEL, N.;QIAN, XUE-YU
分类号 H05H1/00;C23C14/00;C23C16/44;H01J37/32;H01L21/3065;H05H1/46;(IPC1-7):H01J37/32 主分类号 H05H1/00
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