发明名称 |
Method of depositing an optical quality silica film by PECVD |
摘要 |
A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.
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申请公布号 |
US2003059556(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20010956916 |
申请日期 |
2001.09.21 |
申请人 |
OUELLET LUC;LACHANCE JONATHAN |
发明人 |
OUELLET LUC;LACHANCE JONATHAN |
分类号 |
C23C16/40;C23C16/56;G02B1/10;G02B6/10;G02B6/12;G02B6/132;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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