System and method of defect optimization for chemical mechanical planarization of polysilicon

摘要

A system and method of reducing defects in chemical mechanical planarization of polysilicon is disclosed. The system includes first and second polishing stations each having a different hardness polishing pad and a different slurry. A cleaning station using a dilute SC1 chemistry is also included. The process includes polishing a polysilicon wafer on a first polishing station using a hard polishing pad and then polishing the polysilicon wafer on a second polishing station having a soft pad. The polysilicon wafer may then be directly placed in a scrubber using a dilute SC1 chemistry.