发明名称 |
A method of Forming an Insulating Film on a Semiconductor Device |
摘要 |
A method of forming an insulating film on a semiconductor device comprises coating a GaAs substrate with an alcohol solution of SiO2 containing Ga, and then heat treating the substrate. The presence of Ga in the film inhibits diffusion of Ga from the substrate and thus results in a low interface state density. |
申请公布号 |
GB2064218(A) |
申请公布日期 |
1981.06.10 |
申请号 |
GB19800037986 |
申请日期 |
1980.11.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LTD |
发明人 |
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分类号 |
H01L29/78;H01L21/316;(IPC1-7):01L21/56;01L23/30 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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