发明名称 Method of detecting flaw and apparatus for detecting flaw
摘要 A silicon wafer formed with a circuit pattern is illuminated with light. Illuminating light diffracted by the silicon wafer is picked up by a CCD camera. An angle of incidence thetai of the illuminating light and an angle of diffraction thetad of the diffracted light is taken as a single set, parameters of the single set are changed at least once and a diffracted pattern from the silicon wafer is imaged two times. The parameters of the single set are decided so as to fulfill Px(sinthetad-sinthetai)=mlambd, where P is the pitch of the pattern, lambd is the wavelength of the illuminating light, and m is the diffraction order of the diffracted light. An image processing device then traces the larger of level signals for image signals obtained from the double-imaging to obtain an inspection signal. This makes changes in signal waveforms for flaws conspicuous.
申请公布号 US2003057384(A1) 申请公布日期 2003.03.27
申请号 US20020270581 申请日期 2002.10.16
申请人 NIKON CORPORATION 发明人 FUKAZAWA KAZUHIKO
分类号 G01B11/30;G01B11/24;G01N21/88;G01N21/95;G01N21/956;(IPC1-7):G01N21/88 主分类号 G01B11/30
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