| 摘要 |
PURPOSE: An ESD(Electro-Static Discharge) structure is provided to be capable of reducing the size of a pad layout by forming an N+ active region at a pad region. CONSTITUTION: An ESD structure is provided with the first region having the first P-N diode, formed at a P+ active region(15) located in an N-type well region(13), the second P-N diode formed at an N+ active region(14) located in a P-type well region(12), the second region having a parasitic field transistor device and a pad region, and a poly layer formed and inserted between an input pad and a contact region(17) of an active region for protecting the active region formed at the lower portion of the pad region. Preferably, the poly layer has the same size and shape as the active region formed at the lower portion of the pad region.
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