| 摘要 |
The present invention describes a method of forming a mask comprising: providing a substrate, the substrate having a first thickness; forming a balancing layer over the substrate, the balancing layer having a second thickness; forming an absorber layer over the balancing layer, the absorber layer having a first region separated from a second region by a third region; removing the absorber layer in the first region and the second region; removing the balancing layer in the second region; and reducing the substrate in the second region to a third thickness. The present invention also describes a mask comprising: an absorber layer, the absorber layer having a first opening and a second opening, the first opening uncovering a balancing layer disposed over a substrate having a first thickness, and the second opening uncovering the substrate having a second thickness. |
