MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATERIAL

摘要

A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growt h by means of pulse laser deposition or plasma sputtering, thermal annealing o f the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performanc e due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. The gain material is susceptible to utilization of direct diode or fiber laser pumping of a microchip laser with a level of pow er density providing formation of positive lens and corresponding cavity stabilization as well as threshold population inversion in the laser materia l. Multiple application of the laser material are contemplated in the invention .