发明名称 |
Semiconductor device and drive circuit using the semiconductor devices |
摘要 |
A high-speed bipolar transistor is provided which is improved in the effect of heat radiation without increasing the substrate capacitance. The heat radiation connection between a base region and a silicon substrate includes a p+ extrinsic base polysilicon electrode and a polysilicon layer buried in an isolation groove with a very thin silicon dioxide side wall. Accordingly, the heat generated at the base is radiated through this path to the silicon substrate. Further, the film thickness of the silicon dioxide on the inner wall of the isolation groove is sufficiently increased compared with previous structures to prevent an increase in the substrate capacitance. Consequently, there can be obtained a bipolar transistor which operates at high speed, and is improved in the effect of heat radiation without increasing the substrate capacitance.
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申请公布号 |
US2003057523(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20020289306 |
申请日期 |
2002.11.07 |
申请人 |
OUE EIJI;WASHIO KATSUYOSHI;KONDO MASAO;SHIMAMOTO HIROMI |
发明人 |
OUE EIJI;WASHIO KATSUYOSHI;KONDO MASAO;SHIMAMOTO HIROMI |
分类号 |
H01L21/331;H01L21/76;H01L21/822;H01L21/8234;H01L21/8249;H01L23/367;H01L27/04;H01L27/06;H01L29/73;H01L29/732;H01L29/786;(IPC1-7):H01L27/082 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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