发明名称 |
Semiconductor laser and a manufacturing method for the same |
摘要 |
A semiconductor laser, includes: a first cladding layer; an active layer that is formed on top of the first cladding layer; a second cladding layer that is formed on top of the active layer and has a different type of conductivity to the first cladding layer; an etch-stop layer that is formed on top of the second cladding layer and has a same type of conductivity as the second cladding layer; and a light-confining construction that is formed on top of the etch-stop layer by an etching process. The etch-stop layer has a surface part that contacts the light-confining construction. This surface part is composed of an (AlxGa1-x)yIn1-yP semiconductor, where 0.2≤x<0.7 and 0<y≤1. |
申请公布号 |
EP1035624(A3) |
申请公布日期 |
2003.03.26 |
申请号 |
EP20000301607 |
申请日期 |
2000.02.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUKUHISA, TOSHIYA;YOSHIKAWA, AKIO |
分类号 |
G11B7/125;H01S5/00;H01S5/065;H01S5/20;H01S5/22;H01S5/223;H01S5/227;H01S5/30;H01S5/343 |
主分类号 |
G11B7/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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