| 摘要 |
An interlayer insulating film having a connection hole and a line insulating film having a wiring groove are formed on a semiconductor substrate. The interlayer insulating film and the line insulating film are made principally of SiO2, and contain phosphorus and hydrocarbon. A copper wiring film that covers the connection hole and the wiring groove of the interlayer insulating film and the line insulating film is formed. Therefore, this semiconductor device is able to prevent the diffusion of copper into a low dielectric constant insulating film constructed of the interlayer insulating film and the line insulating film, reduce the dielectric constant and water absorptively of the low dielectric constant insulating film and reduce the cross-talk noises. |
