| 摘要 |
PURPOSE: A laser molecular beam epitaxy(MBE) apparatus is provided in which an ion beam generator is set to easily control supply of active oxygen when a metal oxide is fabricated and an ion beam formed from various gases is irradiated on the surface of the metal oxide to change composition and structure thereof. CONSTITUTION: A laser MBE apparatus has a pressure gauge(12) and an external vacuum pump(11) and vaporizes a metal oxide target(1) with a high-power pulse laser beam at a low pressure to deposit a metal oxide on a substrate(2) heated by a heater(3). The laser MBE apparatus includes a gas flow rate adjustment controller(6) for receiving an electrical signal from the pressure gauge to control gas flow rates, a gas flow rate controller(7) for supplying gases such that the laser MBE apparatus has a desired inner vacuum degree when the metal oxide is deposited, an ion beam generation controller(5) attached to the outside of the MBE apparatus to control the speed of an ion beam, and an ion beam generator(4) set inside the MBE apparatus to ionize the gases inserted from the gas flow rate controller, generating the ion beam.
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