| 摘要 |
The present invention includes methods and apparatus as described in the claims. Briefly, semiconductor diodes having a low forward conduction voltage drop, a low reverse leakage current, a high voltage capability and avalanche energy capability, suitable for use in integrated circuits as well as for discrete devices are disclosed. The semiconductor diodes are diode configured vertical cylindrical metal oxide semiconductor field effect devices having one diode terminal as the common connection between the gates and drains of the vertical cylindrical metal oxide semiconductor field effect devices, and one diode terminal as the common connection with the sources of the vertical cylindrical metal oxide semiconductor field effect devices. The method of manufacturing the vertical cylindrical metal oxide semiconductor field effect devices is disclosed. Various device terminations can be employed to complete the diode devices. Various embodiments are disclosed.
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