发明名称 FET switch with overvoltage protection
摘要 A bus switch for transferring logic signals between nodes without the problems associated with overvoltage conduction. The bus switch is an FET switch including a single primary transfer transistor. The bulk of the transfer transistor is coupled to an arbitration circuit that establishes a pseudo high-potential power rail. The pseudo high-potential rail is the highest of a potential associated with the first node, the second node, and a standard high-potential supply rail. The arbitration circuit includes regulating diode devices in parallel, one of which passes to the pseudo high-potential rail the potential associated with the first node and the other the potential associated with the second node, whichever is higher. If both are substantial equal to the potential of the standard high-potential rail, that potential is passed to the pseudo high-potential rail.
申请公布号 US6538867(B1) 申请公布日期 2003.03.25
申请号 US20000713587 申请日期 2000.11.15
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 GOODELL TRENOR F.;RICHARDS JENNIFER
分类号 H03K17/06;H03K17/0814;H03K17/30;H03K17/693;(IPC1-7):H02H3/20;H02H9/04 主分类号 H03K17/06
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