| 摘要 |
Embodiments include a semiconductor device and a method for manufacturing the same, which simplify the manufacturing steps and provide split gate type non-volatile memory transistors and other device elements mounted on the same chip. In one method, the step of forming the lower electrode of a capacitor 540 and the step of forming a floating gate 40 of a memory transistor 400 are conducted in different steps. As a result, characteristics of the floating gate 40 and characteristics of the lower electrode 54 can be independently optimized. On the other hand, the step of forming a control gate 36 of the memory transistor 400 and the step of forming an upper electrode 58 of the capacitor 540 are conducted in the same step. As a result, the manufacturing process is simplified.
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