| 摘要 |
In a CVD method using a CVD system in which the inside of the vacuum container of the said CVD system is separated into a plasma generating space and a film forming space by a conductive partition wall having plural penetration holes, exciting radicals produced in the plasma generating space are introduced into the film forming space only through the said penetration holes, supplying material gas from outside into an inner space of the said partition wall, which is separated from the plasma generating space and communicating with the film forming space through plural diffusion holes, and introducing the said material gas into the film forming space through the said diffusion holes, and a film is formed on the substrate by the exciting radicals and material gas thus introduced into the film forming space, the invention is intended to provide a CVD method suited to mass production of oxide films, mainly to mass production of oxide films for gate having excellent characteristics. The object is achieved by adopting the process comprising a first step of forming a film on the substrate as the before described, and a second step of emitting exciting radicals to the film formed at the first step to promote oxidation reaction.
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