| 摘要 |
PROBLEM TO BE SOLVED: To prevent the decline in dielectric strength of a gate insulation film and reduce the number of manufacturing processes, in a thin film transistor. SOLUTION: On the upper surface of an insulation substrate 21, a metal film 31 formed of Cr or the like is formed. Then, an alkali solution treatment is conducted to improve the surface condition of the metal film 31. Next, the metal film 31 is patterned to form a gate electrode 22. On the entire surface, a gate insulation film 23 formed of silicon nitride is formed. In this case, the decline in dielectric strength of the gate insulation film 23 due to the surface condition of the gate electrode 22 can be prevented since the surface condition of the gate electrode 22 is already improved. Consequently, less number of manufacturing processes is required than in the case that the decline in dielectric strength of the gate insulation film 23 is prevented by forming an anode oxide film on the surface of the gate electrode 22.
|
