Amorphous metal oxide gate dielectric structure and method thereof

摘要

In accordance with a specific embodiment of the present invention, a method of forming a gate dielectric is disclosed. A semiconductor wafer is placed in a deposition chamber. The semiconductor wafer is heated and a precursor gas is flowed into the chamber. In one embodiment, the precursor comprises a moiety of silicon, oxygen, and a transition metal. In another embodiment, the moiety includes a group 2 metal.