| 摘要 |
<p>A method for manufacturing a high-capacity solid-state electrolytic capacitor directly connectable to a semiconductor component and excellent in high-frequency characteristics comprises the dielectric forming stage of making a valve metal sheet (2) porous to form a dielectric film (7) over a porous surface (3), the element forming stage of forming a solid-state electrolytic layer (8) and collector layer (10) over the dielectric film, and the terminal forming stage of forming a connection terminal (16) to an external electrode. The element forming step comprises the electrolyte layer forming step of forming a solid-state electrolyte layer (8) over the dielectric film (7), the through-hole electrode forming step of forming a through-hole electrode (9) in a through hole (5) formed in the valve metal sheet (2), and the collector layer forming step of forming a collector layer (10) over the solid-state electrolyte layer (8).</p> |
