发明名称 COF-TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a semiconductor device manufactured according to the method wherein leads and bumps are aligned with high precision and superior reproducibility. SOLUTION: The semiconductor device comprises a semiconductor chip and a film for COF having leads formed on the main surface of an insulating base film with a space corresponding to external electrodes (pads) of the semiconductor chip. Through-holes are provided between the counterposed tips of inner leads of the leads on the film for COF.</p>
申请公布号 JP2003086629(A) 申请公布日期 2003.03.20
申请号 JP20010277803 申请日期 2001.09.13
申请人 HITACHI LTD;HITACHI TOKYO ELECTRONICS CO LTD 发明人 TANIGAWA YOSHIYUKI;FUTAMI MASAHITO;TABATA KATSUHIRO;TOMA NOBUHISA;SHINODA MASAYOSHI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址