发明名称 |
COF-TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a semiconductor device manufactured according to the method wherein leads and bumps are aligned with high precision and superior reproducibility. SOLUTION: The semiconductor device comprises a semiconductor chip and a film for COF having leads formed on the main surface of an insulating base film with a space corresponding to external electrodes (pads) of the semiconductor chip. Through-holes are provided between the counterposed tips of inner leads of the leads on the film for COF.</p> |
申请公布号 |
JP2003086629(A) |
申请公布日期 |
2003.03.20 |
申请号 |
JP20010277803 |
申请日期 |
2001.09.13 |
申请人 |
HITACHI LTD;HITACHI TOKYO ELECTRONICS CO LTD |
发明人 |
TANIGAWA YOSHIYUKI;FUTAMI MASAHITO;TABATA KATSUHIRO;TOMA NOBUHISA;SHINODA MASAYOSHI |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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