| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistivity and, at the same time, to stabilize device characteristics. SOLUTION: After forming a surface channel layer 5 formed of 4H or 6H-SiC on the surface of an n<-> -type drift layer 2, an unnecessary part of the surface channel layer 5 is removed by using a resist 20 as a mask. Then, the resist 20 is removed, and a carbon layer 21 is disposed on the surface of the surface channel layer 5. With the carbon layer 21 as a mask, a semiconductor layer 22 formed of 3C-SiC is deposited by epitaxial growth. By implanting ions into a predetermined area of the semiconductor layer 22, an n<+> -type source region 4 is formed. Since the surface channel layer 5 can be formed of 4H or 6H-SiC and the semiconductor layer 22 which becomes an n<+> -type source region 4 can be formed of 3C-SiC, contact resistivity can be reduced and device characteristics can be stabilized.
|
