Method for manufacturing a semiconductor device and method for processing substrate

摘要

A method for manufacturing a semiconductor device and a method for processing a substrate are provided in which films containing Ru can be easily fabricated with good step coverage, reduced deposition delay times and hence good in-plane uniformity. The films containing Ru are deposited on a substrate by using a gas vaporized from Ru[CH3COCHCO(CH2)3CH3]3 and an oxygen-containing gas at a deposition temperature of 250° C. to 305° C. and at a partial pressure of the oxygen-containing gas of 6.9 Pa or less.