| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composition for CMP processing which has high selectivity of large polishing rate of copper and small polishing rate of tantalum compound and is superior in smoothness of a copper film surface in a CMP processing process of a semiconductor device, having a copper film and tantalum compound. SOLUTION: The polishing composition is composed of (A) benzotriazole, (B) citric acid, (C) hydrogen peroxide, (D) polyvinyl alcohol and (E) water. The concentration of benzotriazole in the polishing composition is 0.01 to 3 wt.%, the concentration of citric acid in the polishing composition is 0.05 to 5 wt.%, the concentration of hydrogen peroxide in the polishing composition is 0.03 to 5 wt.%, and the concentration of polyvinyl alcohol in the polishing composition is 0.01 to 5 wt.%.</p> |
