LATERAL OVERFLOW DRAIN, ANTIBLOOMING STRUCTURE FOR CCD DEVICE HAVING IMPROVED BREAKDOWN VOLTAGE

摘要

PROBLEM TO BE SOLVED: To improve conductance and blooming protection by making a breakdown voltage large and increasing the dosage of LOD. SOLUTION: An image sensor has an antiblooming structure. The image sensor includes a 1st conductivity semiconductor substrate, a dielectric which has a 1st thin part and a 2nd thick part, a 2nd conductivity buried channel which extends in the substrate substantially over the 1st thin part, and a 2nd conductivity lateral overflow drain area which is arranged over part of the 2nd thick part substantially on the whole and gathers light-generated excessive electric charges to prevent blooming.