发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory performing high speed write-in or error correction by switching and utilizing an address signal line connected to a CPU as a data signal line. SOLUTION: This device is a semiconductor memory connected to a processing device having an address signal line specifying an address space and a data signal line performing input/output of data independently, the semiconductor memory is provided with a signal line switching function 105 switching an address signal line so as to be able to operate as a data signal line, a data width switching function 112 switching data width, and address generating functions 106, 107, 110 generating automatically an address, at the time of writing data by a processing device, data is taken in through an address signal line by using the signal line switching function in addition to take-in of data through the data signal line. Error correction of data of the data signal line is performed by using data taken in from the address line as data for error correction.
申请公布号 JP2003085978(A) 申请公布日期 2003.03.20
申请号 JP20010272023 申请日期 2001.09.07
申请人 SHARP CORP 发明人 HASEGAWA YASUYUKI
分类号 G11C11/413;G11C11/401;G11C11/408;G11C29/00;G11C29/42;(IPC1-7):G11C11/413 主分类号 G11C11/413
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