GROUP III NITRIDE CRYSTAL, APPARATUS FOR GROWING THE SAME, HAVING OBSERVING FUNCTION, METHOD OF GROWING GROUP III NITRIDE CRYSTAL, AND DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a group III nitride crystal having a practical size capable of manufacturing a device such as a high performance light emitting diode or an LD without making the process complicated, using an expensive reaction vessel, making the size of a crystal small, and causing the rise in cost, and to provide a growth apparatus and a growth method for growing the crystal. SOLUTION: Mixed melt 103 is provided in a reaction vessel 101 and contains an alkaline metal and at least a group III metal. In the growth apparatus for growing the group III nitride crystal comprising a group III metal and nitrogen from the mixed melt 103 and a substance containing at least nitrogen, a function capable of observing the inside of the reaction vessel from the outside of the reaction vessel is provided. It is possible to observe the inside of the vessel 101 with a monitor 111 having a CCD 110 through a lens 109 provided at the outside of a window 108. A heating unit 106 is also provided.