| 摘要 |
PURPOSE: An LED device of a semiconductor and a method for fabricating the same are provided to obtain effectively the light of a desired wavelength by forming a pumping layer in the inside of the LED device. CONSTITUTION: A buffer layer(21) and an n-type Alx1Gay1Inz1N layer(22) are formed on a substrate(20). A pattern of an active layer(23), a pattern of an n-type AlGaInN layer(24), a pattern of a pumping layer(25), a pattern of a p-type AlGaInN layer(26), and a pattern of a p-type electrode(27) are sequentially formed on the n-type Alx1Gay1Inz1N layer(22). Each sidewall of the patterns of the active layer(23), the n-type AlGaInN layer(24), the pumping layer(25), and the p-type AlGaInN layer(26) has slopes of 10 to 89 degrees. A transparent insulating layer(28) is formed on the sidewalls of the patterns of the active layer(23), the n-type AlGaInN layer(24), the pumping layer(25), the p-type AlGaInN layer(26), and the p-type electrode(27). An n-type electrode(29) is connected with the n-type Alx1Gay1Inz1N layer(22). |
