| 摘要 |
PROBLEM TO BE SOLVED: To easily form a photoresist lattice pattern having a small lattice point size at a high speed. SOLUTION: A tetragonal lattice pattern 9 is formed in a photoresist by carrying out first exposure through an L/S pattern and a second exposure through an L/S pattern inclined from the above L/S pattern by 90 deg. with an optical exposure system. The objective photoresist lattice pattern having high resolution that reaches the critical limit of the optical exposure method is obtained at a high speed by utilizing high solubility of the multiply exposed portions 10 in a developing solution or insolubility of the unexposed portions 13 in the developing solution.
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