| 发明名称 |
METHOD FOR DEPOSITING METAL AND METAL OXIDE FILMS AND PATTERNED FILMS |
| 摘要 |
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure. |
| 申请公布号 |
EP1292718(A2) |
申请公布日期 |
2003.03.19 |
| 申请号 |
EP20010934918 |
申请日期 |
2001.04.27 |
| 申请人 |
EKC TECHNOLOGY, INC. |
发明人 |
HILL, ROSS, H.;SHI, YOUMAO |
| 分类号 |
C22B7/00;C09K13/00;C11D7/32;C11D7/34;C23C18/14;G03F7/42;H01L21/02;H01L21/28;H01L21/306;H01L21/311;H01L21/3213;H01L21/768;H05K3/10;(IPC1-7):C23C16/00 |
主分类号 |
C22B7/00 |
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