发明名称 ORGANOMETALLIC PRECURSOR FOR FORMING METAL PATTERN AND METAL PATTERN FORMATION METHOD USING THE PRECURSOR
摘要 PURPOSE: An organometallic precursor for forming the metal pattern and a method for forming the metal pattern using the precursor are provided, to enable the electrically conductive metal pattern to be formed easily by direct exposure without using a photosensitive resin. CONSTITUTION: The organometallic precursor is represented by L'-M-L, wherein M is a transition metal selected from the group consisting of Ag, Au, Cu, Pd, Ni and Pt; L is an imidazolylidene compound represented by the formula 2; and L' is an imidazolylidene compound represented by the formula 2 or a β-diketonate compound represented by the formula 3. In the formula 2, R1 to R4 are independent each another and are H, an alkyl group of C1-C20, an alkenyl group, an alkynyl group, a carboxylic group, an alkoxy group, an ester group or an aromatic hydrocarbon group; and in the formula 3, R5 to R7 are independent each another and are H, an alkyl group of C1-C20, an alkenyl group, an alkynyl group, a carboxylic group, an alkoxy group, an ester group or an aromatic hydrocarbon group.
申请公布号 KR20030022911(A) 申请公布日期 2003.03.19
申请号 KR20010055755 申请日期 2001.09.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, YEONG HUN;HWANG, EOK CHAE;HWANG, SUN TAEK;JUNG, MIN CHEOL
分类号 G03F7/004;C07C49/92;C07D233/04;C07F1/00;C07F1/08;C07F1/10;C07F15/00;C07F15/04;H01L21/027;H01L21/288;H05K3/10;(IPC1-7):G03F7/00 主分类号 G03F7/004
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