发明名称 |
Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit |
摘要 |
A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing "bumps" or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.
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申请公布号 |
US6534398(B2) |
申请公布日期 |
2003.03.18 |
申请号 |
US20010759925 |
申请日期 |
2001.01.12 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
SHAN ENDE;LAU GORLEY;GEHA SAM G. |
分类号 |
H01L21/027;H01L21/033;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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