PLASMA ETCHING DEVICE AND PLASMA ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching device and a plasma etching method for efficiently and inexpensively performing uniform etching work. SOLUTION: In a plasma etching method, a substrate to be processed 7 is placed on a lower electrode 3 disposed so that it faces an upper electrode 6 in a processing chamber 5, and plasma etching is performed. Mix gas including oxygen and fluorine gases is supplied into the processing chamber 5. Plasma discharge is performed between the upper and lower electrodes under a condition that the product PL of an inter-electrode distance L [m] and the discharge pressure P [Pa] of mix gas in the processing chamber 5 becomes the value of the range of 2.5 [Pa.m] to 15 [Pa.m], which is a range giving a satisfactory etching rate. Thus, inexpensive and highly efficient plasma etching is performed.