| 摘要 |
PROBLEM TO BE SOLVED: To obtain a light emitting element in which an LED array having a high output is formed as an entirety by suppressing an increase in a forward voltage, while a merit of improving a light outputting efficiency by a Bragg type multiple-reflection film is utilizing. SOLUTION: The light emitting element comprises an n-type GaAs buffer layer 6, an n-type AlGaAs multiple-reflection film 5 having a different Al composition, an n-type AlGaAs lower clad layer 4, a p-type AlGaAs active layer 3, a p-type AlGaAs upper clad layer 2, and a p-type GaAs contact layer 1 sequentially epitaxially grown on an n-type GaAs substrate 7. In this element, the film 5 is made of an AlX1 Ga1- X1 As/AlX2 Ga1- X2 As multilayer film (wherein an Al composition ratio: X1<X2, and a refractive index: n1>n2), and a band gap energy (EgX1 ) of the AlX1 Ga1- X1 As layer with X1>=X and X2>=X to the Al composition ratio X of the active layer 3 has a relation of EgX1 >=Eλ to an energy (Eλ) of a light emitting wavelength. |
