发明名称 MEMORY CONTROL METHOD AND MEMORY CONTROL CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To solve such problems on a synchronous high-speed memory that the setup time for write data is liable to run short and sometimes causes difficulty in no-wait operation. SOLUTION: This memory control circuit 1 has a memory input control circuit 4, a latch control circuit 3, a latch junction circuit 50, and a read data selection circuit 5. The latch function circuit 50 latches a write command, write data and an addresses under the control of the latch control circuit 3 and delays a write cycle being viewed from a memory 2 by one clock component. In this process, the write data can be made sufficiently ready. When there is read access to a memory address where write is not completed, the read data selection circuit 5 selects and outputs the write data latched by the latch function circuit 50.</p>
申请公布号 JP2003076602(A) 申请公布日期 2003.03.14
申请号 JP20010268102 申请日期 2001.09.04
申请人 SANYO ELECTRIC CO LTD 发明人 FUJII YOSHINARI
分类号 G11C11/413;G06F12/00;G11C11/401;G11C11/41;(IPC1-7):G06F12/00 主分类号 G11C11/413
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