发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To install an overcurrent restraining circuit which can prevent that an output transistor deviates from an allowable loss range and is thermally broken down, by detecting whether the output transistor operates in a safe operation region in a power IC. SOLUTION: This power semiconductor device is provided with the output transistor 2, a resistance element 17 for detecting an output current Ioc of the transistor 2, a circuit 40a for detecting a voltage between a collector and an emitter of the transistor 2, and the overcurrent restraining circuit 30a for controlling an overcurrent limiting value of an output current, according to a detection value of the circuit 40a. In the transistor 2, a driving voltage VIN is applied to a driving voltage terminal IN, and an output voltage Vo is led out from an output terminal OUT. The emitter and collector of the transistor 2 are connected with a part between the terminal IN and the terminal OUT, and a base of the transistor 2 is subjected to driving control by a driving circuit 1.
申请公布号 JP2003078362(A) 申请公布日期 2003.03.14
申请号 JP20010266227 申请日期 2001.09.03
申请人 TOSHIBA CORP 发明人 WATANABE KIYOMI
分类号 H01L23/58;H03F1/52;H03F3/21;(IPC1-7):H03F1/52 主分类号 H01L23/58
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