| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for analyzing and measuring a present state and abundance without destroying and contacting in a dopant Ge in a dopant atom dope Ge. SOLUTION: By examining the presence and magnitude of the localized oscillating peak of a dopant atom that is observed by Raman scattering spectrometry of a dopant atom dope Ge, the present state (combined state and present location) of a dopant atom in the Ge is determined. The strength of the localized oscillating peak of the dopant element observed by the Raman scattering spectrometry of a dopant atom dope Ge is determined by standardizing based on the optical phonon peak strength of Ge observed at 290-301 cm<SP>-1</SP>, and the concentration of a dopant element doped in Ge is measured from the comparison data (calibration curve) between the concentration of the dopant element and the localized oscillating peak strength that are previously prepared. COPYRIGHT: (C)2010,JPO&INPIT |
