METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for easily removing a residual generated in dry-etching on SiN (silicon nitride) which is an insulting film layer in a process for manufacturing a semiconductor substrate and efficiently cleaning the semiconductor substrate without the corrosion of a-Si, polysilicon and a wiring material, which are used for a glass substrate and a thin film circuit. SOLUTION: In the cleaning method of the semiconductor substrate, the residual generated in dry-etching the insulating film layer is removed by a cleaner including oxidizing agent and chelate agent in the manufacturing process of the semiconductor substrate. The concentration of oxidizing agent in cleaner is preferably 0.1 to 60 weight %, and the concentration of chelate agent in the cleaner to be 0.0001 to 5 weight %.