发明名称 HIGH VOLTAGE INTEGRATED CIRCUIT AMPLIFIER
摘要 <p>A circuit (200) including at least one low voltage input (LV-In), at least one high voltage output (HV-out), and a field transistor (210) having a source, a drain and a control region. The circuit may compromise a high-voltage amplifier. In this embodiment, an electrical connection between the high-voltage output terminal and the field transistor control region, and an electrical connection between the input terminal and a second transistor. Various embodiments of the field transistor are described.</p>
申请公布号 WO2003021638(A2) 申请公布日期 2003.03.13
申请号 US2002027438 申请日期 2002.08.28
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