PLASMA CLEANING GAS AND PLASMA CLEANING METHOD

摘要

A CVD chamber−use plasma cleaning gas which is used to clean silicon−containing deposits accumulated on the inner−wall surface of a CVD chamber and on the surfaces of members disposed in the CVD chamber after a film is formed on a substrate by a plasma CVD device,characterized in that the cleaning gas is a 100 vol.% of fluorine gas that generates plasma by discharging.When plasma generated by discharging from a 100 vol.% in concentration of fluorine gas is used as a cleaning gas,a very excellent etching speed is available,plasma can be generated constantly even at a total gas flow rate of 1000 sccm and under a chamber pressure of 400 Pa,and a uniform cleaning can be ensured under the above conditions.The 100% concentration does not complicate the device to provide an excellent practical use.