| 发明名称 |
NON-VOLATILE MEMORY DEVICE |
| 摘要 |
In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties an d capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer. |
| 申请公布号 |
CA2459319(A1) |
申请公布日期 |
2003.03.13 |
| 申请号 |
CA20022459319 |
申请日期 |
2002.08.28 |
| 申请人 |
THIN FILM ELECTRONICS ASA |
发明人 |
GUDESEN, HANS GUDE;NORDAL, PER-ERIK |
| 分类号 |
G01C11/22;G11C11/22;H01L21/8246;H01L27/105;H01L27/115;H01L27/28;H01L51/05;(IPC1-7):G11C11/22;C08L27/16 |
主分类号 |
G01C11/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
