发明名称 |
Vertical cavity surface emitting semiconductor laser device |
摘要 |
A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3<=0.3 and 0.55<=x3<1 and an impurity concentration of 3x1017 cm-3 or above.
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申请公布号 |
US2003048824(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020217227 |
申请日期 |
2002.08.09 |
申请人 |
SHINAGAWA TATSUYUKI;IWAI NORIHIRO;YOKOUCHI NORIYUKI |
发明人 |
SHINAGAWA TATSUYUKI;IWAI NORIHIRO;YOKOUCHI NORIYUKI |
分类号 |
H01S5/183;H01S5/323;(IPC1-7):H01S5/00;H01S3/08 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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