发明名称 |
Semiconductor laser device containing controlled interface oxygen at both end facets |
摘要 |
In a semiconductor laser device: a multilayer structure including a plurality of semiconductor layers is formed on a substrate; and at least one dielectric layer is formed on each of two end facets of the multilayer structure, where the at least one dielectric layer on each of the two end facets includes a reflectance control layer. In addition, at least one portion of the multilayer structure in at least one vicinity of at least one of the two end facets contains 10 to 1,500 times more oxygen than the other portions of the multilayer structure.
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申请公布号 |
US2003048823(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020232525 |
申请日期 |
2002.09.03 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
YAMANAKA FUSAO |
分类号 |
H01S5/028;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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