发明名称 CHEMICAL SURFACE DEPOSITION OF ULTRA-THIN SEMICONDUCTORS
摘要 <p>A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.</p>
申请公布号 WO03021648(A1) 申请公布日期 2003.03.13
申请号 WO2002US25862 申请日期 2002.08.14
申请人 UNIVERSITY OF DELAWARE 发明人 MCCANDLESS, BRIAN, E.;SHAFARMAN, WILLIAM, N.
分类号 C23C6/00;C23C18/12;C23C26/02;H01L21/368;H01L31/0336;H01L31/073;H01L31/0749;H01L31/18;(IPC1-7):H01L21/20;H01L21/36 主分类号 C23C6/00
代理机构 代理人
主权项
地址