发明名称 |
CHEMICAL SURFACE DEPOSITION OF ULTRA-THIN SEMICONDUCTORS |
摘要 |
<p>A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.</p> |
申请公布号 |
WO03021648(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
WO2002US25862 |
申请日期 |
2002.08.14 |
申请人 |
UNIVERSITY OF DELAWARE |
发明人 |
MCCANDLESS, BRIAN, E.;SHAFARMAN, WILLIAM, N. |
分类号 |
C23C6/00;C23C18/12;C23C26/02;H01L21/368;H01L31/0336;H01L31/073;H01L31/0749;H01L31/18;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
C23C6/00 |
代理机构 |
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代理人 |
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地址 |
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